| PART |
Description |
Maker |
| APT50GP60S |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT26GU30B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT13GP120K |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT25GP120B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT35GP120J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT83GU30B APT83GU30S |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technology
|
| APT75GP120B2 |
MOSFET
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT65GP60L2DF2 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
http://
|
| APT65GP60J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
http://
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V 1000V 21A 0.500 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
